An X-band class-B push-pull power amplifier on a 0.25 ?m SiGe-C process
| dc.authorid | 0000-0002-5881-1557 | |
| dc.contributor.author | Çağdaş, Engin | |
| dc.contributor.author | Aniktar, Hüseyin | |
| dc.contributor.author | Savcı, Hüseyin Şerif | |
| dc.contributor.author | Palamutçuoğulları, Osman | |
| dc.date.accessioned | 2024-02-13T10:00:57Z | |
| dc.date.available | 2024-02-13T10:00:57Z | |
| dc.date.issued | 2023 | |
| dc.department | İstanbul Medipol Üniversitesi, Mühendislik ve Doğa Bilimleri Fakültesi, Elektrik ve Elektronik Mühendisliği Bölümü | |
| dc.description.abstract | This paper presents design of an X-band power amplifier (PA) with Class-B push-pull configuration in 0.25-?m SiGe-C Heterojunction Bipolar Transistor (HBT) BiCMOS process. The PA consists of input balun, driver stage, interstage transformer, output stage and the output transformer. The cascoded structure is chosen to obtain adequate power gain. The simulations show an output power of 21.5 dBm with associated power added efficiency (PAE) of 41% at the operating frequency of 10 GHz. The simulated small signal gain is 21.5 dB with ±1 dB gain flatness from 8 to 12 GHz. | |
| dc.description.sponsorship | Semiconductor Test and Research Laboratory at Tübitak Bilgem | en_US |
| dc.identifier.citation | Çağdaş, E., Aniktar, H., Savcı, H. Ş. ve Palamutçuoğulları, O. (2023). An X-band class-B push-pull power amplifier on a 0.25 ?m SiGe-C process. 30th IEEE International Conference on Electronics, Circuits and Systems, ICECS 2023. Istanbul, 4-7 December 2023. https://dx.doi.org/10.1109/ICECS58634.2023.10382854 | |
| dc.identifier.doi | 10.1109/ICECS58634.2023.10382854 | |
| dc.identifier.isbn | 9798350326499 | |
| dc.identifier.scopus | 2-s2.0-85183584392 | |
| dc.identifier.scopusquality | N/A | |
| dc.identifier.uri | https://dx.doi.org/10.1109/ICECS58634.2023.10382854 | |
| dc.identifier.uri | https://hdl.handle.net/20.500.12511/12268 | |
| dc.indekslendigikaynak | Scopus | |
| dc.institutionauthor | Savcı, Hüseyin Şerif | |
| dc.language.iso | en | |
| dc.publisher | Institute of Electrical and Electronics Engineers Inc. | |
| dc.relation.ispartof | 30th IEEE International Conference on Electronics, Circuits and Systems, ICECS 2023 | en_US |
| dc.relation.publicationcategory | Konferans Öğesi - Uluslararası - Kurum Öğretim Elemanı | |
| dc.rights | info:eu-repo/semantics/embargoedAccess | |
| dc.subject | HBT | |
| dc.subject | Push-Pull-PA | |
| dc.subject | RFIC | |
| dc.subject | SiGe-C | |
| dc.title | An X-band class-B push-pull power amplifier on a 0.25 ?m SiGe-C process | |
| dc.type | Article |
