Numerical and measurement based modeling of a MiM capacitor in a 0.25 µm SiGe-C BiCMOS process

dc.authorid0000-0002-5881-1557
dc.contributor.authorAniktar, Hüseyin
dc.contributor.authorSavcı, Hüseyin Şerif
dc.date.accessioned2023-03-03T12:31:41Z
dc.date.available2023-03-03T12:31:41Z
dc.date.issued2023
dc.departmentİstanbul Medipol Üniversitesi, Mühendislik ve Doğa Bilimleri Fakültesi, Elektrik ve Elektronik Mühendisliği Bölümü
dc.description.abstractThis study presents the generation of a scalable model based on measurement-aided numerical calculations for MiMCap (Metal-Insulator-Metal Capacitor) structures with a 0.25 µm SiGe-C BiCMOS technology. Various MiM capacitor structures with several different areas and peripheral sizes are fabricated in an in-house developed BiCMOS process. A set of fix-size models and a generic, scalable model are developed based on numerical EM calculations. The validity of the constructed model is verified with the measurement results. The model includes the breakdown voltage ratings, which are also extracted through the measurements. The model, EM simulations, and measurement results are in good agreement.
dc.identifier.citationAniktar, H. ve Savcı, H. Ş. (2023). Numerical and measurement based modeling of a MiM capacitor in a 0.25 µm SiGe-C BiCMOS process. Progress In Electromagnetics Research C, 129, 173-186. https://dx.doi.org/10.2528/PIERC22112103
dc.identifier.doi10.2528/PIERC22112103
dc.identifier.endpage186
dc.identifier.issn1937-8718
dc.identifier.scopus2-s2.0-85148239756
dc.identifier.scopusqualityQ3
dc.identifier.startpage173
dc.identifier.urihttps://dx.doi.org/10.2528/PIERC22112103
dc.identifier.urihttps://hdl.handle.net/20.500.12511/10566
dc.identifier.volume129
dc.indekslendigikaynakScopus
dc.institutionauthorSavcı, Hüseyin Şerif
dc.language.isoen
dc.publisherElectromagnetics Academy
dc.relation.ispartofProgress In Electromagnetics Research Cen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı
dc.rightsinfo:eu-repo/semantics/openAccess
dc.subject0.25 µm SiGe-C BiCMOS Process
dc.subjectMIM Capacitor
dc.subjectMeasurement Based Modeling
dc.titleNumerical and measurement based modeling of a MiM capacitor in a 0.25 µm SiGe-C BiCMOS process
dc.typeArticle

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