A wideband high-efficiency doherty power amplifier for LTE

Basit Öğe Kaydı
dc.authorid0000-0002-5881-1557
dc.contributor.authorKoca, Kaan
dc.contributor.authorSavcı, Hüseyin Şerif
dc.contributor.authorKent, Sedef
dc.date.accessioned2023-06-16T10:47:44Z
dc.date.available2023-06-16T10:47:44Z
dc.date.issued2023
dc.departmentİstanbul Medipol Üniversitesi, Mühendislik ve Doğa Bilimleri Fakültesi, Elektrik ve Elektronik Mühendisliği Bölümü
dc.description.abstractThis article describes a broadband Doherty power amplifier designed with a class AB and class C PA that is suitable for LTE Band-7 and Wi-Fi applications. The output matching network is theoretically analyzed, with emphasis on the effect of the auxiliary amplifier's non-ideal infinite output impedance on parasitic devices. A novel Doherty-like power amplifier (DPA) is constructed with 25 W, 2.2-2.8 GHz GaN HEMT transistors. The quarter-wave transformer that was previously used in the DPA topology was replaced by the corresponding Klopfenstein tapper network. Real-world prototype implementations have shown that this modification increases the achieved DPA bandwidth (BW) compared to conventional topologies while maintaining efficiency values. (Fractional bandwidth equals 24%) The DPA assumes an OBO value of 6 dB, which is typical for basic designs and explanations because the voltage level involved is 1:4 and the peak power amplifier is activated at half of the input voltage's dynamic range. However, in order to increase the OBO value, the signal must first be compatible with the PAPR value. This can be accomplished by adjusting the power divider in an asymmetrical manner. The OPBO range was extended using the asymmetric DPA technique.
dc.identifier.citationKoca, K., Savcı, H. Ş. ve Kent, S. (2023). A wideband high-efficiency doherty power amplifier for LTE. 33rd International Conference on Radioelektronika (RADIOELEKTRONIKA). Pardubice, Czech Republic, April 19-20, 2023. https://doi.org/10.1109/RADIOELEKTRONIKA57919.2023.10109057
dc.identifier.doi10.1109/RADIOELEKTRONIKA57919.2023.10109057
dc.identifier.isbn9798350398342
dc.identifier.scopusqualityN/A
dc.identifier.urihttps://doi.org/10.1109/RADIOELEKTRONIKA57919.2023.10109057
dc.identifier.urihttps://hdl.handle.net/20.500.12511/11099
dc.identifier.wos000990505700031en_US
dc.identifier.wosqualityN/A
dc.indekslendigikaynakWeb of Science
dc.indekslendigikaynakScopus
dc.institutionauthorSavcı, Hüseyin Şerif
dc.language.isoen
dc.publisherInstitute of Electrical and Electronics Engineers Inc.
dc.relation.ispartof33rd International Conference on Radioelektronika (RADIOELEKTRONIKA)en_US
dc.relation.publicationcategoryKonferans Öğesi - Uluslararası - Kurum Öğretim Elemanı
dc.rightsinfo:eu-repo/semantics/embargoedAccess
dc.subjectDoherty Power Amplifiers (DPA)
dc.subjectBroadband Matching Networks
dc.subjectGaN-Based Field-Effect Transistors (FETs)
dc.subjectWideband Microwave Amplifiers
dc.subjectLong-Term Evolution (LTE)
dc.subjectWi-Fi
dc.titleA wideband high-efficiency doherty power amplifier for LTE
dc.typeConference Object

Dosyalar

Orijinal paket
Listeleniyor 1 - 1 / 1
Küçük Resim Yok
İsim:
Savci-Serif-2023.pdf
Boyut:
1.3 MB
Biçim:
Adobe Portable Document Format
Açıklama:
Tam Metin / Full Text
İndir
Lisans paketi
Listeleniyor 1 - 1 / 1
Küçük Resim Yok
İsim:
license.txt
Boyut:
1.44 KB
Biçim:
Item-specific license agreed upon to submission
Açıklama:
İndir

Koleksiyon

Bildiri Koleksiyonu
Scopus İndeksli Yayınlar Koleksiyonu
WoS İndeksli Yayınlar Koleksiyonu