A MEMS T/R switch embedded in CMUT structure for ultrasound imaging frontends
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CitationZhang, X., Zeshan, A., Adelegan, O. J., Yamaner, F. Y. ve Oralkan, Ö. (2016). A MEMS T/R switch embedded in CMUT structure for ultrasound imaging frontends. IEEE International Ultrasonics Symposium (IUS). Tours, France, September 18-21, 2016. https://dx.doi.org/10.1109/ULTSYM.2016.7728635
This paper describes a novel MEMS transmit/ receive (T/R) switch that could be embedded in the general structure of a capacitive micromachined ultrasonic transducer (CMUT). A MEMS switch and a CMUT element were fabricated side by side using an anodic-bonding-based fabrication process. The plates of the CMUT and the membrane-type switch were formed at the same step by anodic bonding. A single switch was tested in air for preliminary characterization. Vacuum-sealing of the switch cell was confirmed by an atmospheric deflection measurement. The switch was then biased at 59-V DC voltage and turned on and off by applying a 1-kHz, 5-Vpp square wave to the control terminal while a 1-MHz, 300-mVpp sinusoidal signal was applied at the RF input. The signal measured at the RF output demonstrates the basic switching behavior with a switch series resistance of 124 ?. This work is important for the ultrasound imaging system efficiency and could significantly ease the high-voltage requirements of frontend circuits.