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dc.contributor.authorEren, Tamer
dc.contributor.authorOktay, Zehra Nur
dc.contributor.authorDoğan, Hakan
dc.contributor.authorSavcı, Hüseyin Şerif
dc.date.accessioned2021-03-03T12:13:37Z
dc.date.available2021-03-03T12:13:37Z
dc.date.issued2020en_US
dc.identifier.citationEren, T., Oktay, Z. N., Doğan, H. ve Savcı, H. Ş. (2020). 5G/6G uygulamaları için 65nm CMOS ile 6GHz düşük gürültülü yükselteç tasarımı. 12th International Conference on Electrical and Electronics Engineering, ELECO içinde (88-92. ss.). Bursa, Turkey, 26-28 November 2020. https://dx.doi.org/10.1109/ELECO51834.2020.00021en_US
dc.identifier.isbn9786050113310
dc.identifier.urihttps://dx.doi.org/10.1109/ELECO51834.2020.00021
dc.identifier.urihttps://hdl.handle.net/20.500.12511/6592
dc.description.abstractIt is envisaged that 6G network technology will be popular due to its higher working frequencies than 5G networks, and this will ensure higher data rates, greater capacity and lower latency. 6G mobile technology will support sub-microsecond delays which makes communication almost instantaneous. Realization of these goals depend on faster circuits with low noise levels in both transmitters and receivers. In this work, a low noise amplifier (LNA) was designed in 65nm UMC CMOS technology with Cadence Spectre. Differential common source topology with integrated inductors were utilized to achieve low differential noise and better matching performance with higher gain. Proposed LNA has 20dB gain at 6GHz, and the gain is higher than 13dB from DC to 8 GHz. Minimum noise figure is 2.24 dB and S11 is -30dB at 6GHz. Simulated IIP3 is -6.5dBm. The design works with 3.6 mA total current from 1.2V supply voltage.en_US
dc.language.isoturen_US
dc.publisherInstitute of Electrical and Electronics Engineers Inc.en_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectDüşük Gürültülü Yükselteç Tasarımıen_US
dc.subject65nm CMOSen_US
dc.subject5G/6G Uygulamalarıen_US
dc.title5G/6G uygulamaları için 65nm CMOS ile 6GHz düşük gürültülü yükselteç tasarımıen_US
dc.title.alternative6 GHz low noise amplifier design with 65nm CMOS for 5G/6G applicationsen_US
dc.typeconferenceObjecten_US
dc.relation.journal12th International Conference on Electrical and Electronics Engineering, ELECOen_US
dc.departmentİstanbul Medipol Üniversitesi, Mühendislik ve Doğa Bilimleri Fakültesi, Elektrik ve Elektronik Mühendisliği Bölümüen_US
dc.authorid0000-0001-5716-5488en_US
dc.identifier.startpage88en_US
dc.identifier.endpage92en_US
dc.relation.publicationcategoryKonferans Öğesi - Uluslararası - Kurum Öğretim Elemanıen_US
dc.identifier.doi10.1109/ELECO51834.2020.00021en_US


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