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An X-band class-B push-pull power amplifier on a 0.25 μm SiGe-C process
(Institute of Electrical and Electronics Engineers Inc., 2023)
This paper presents design of an X-band power amplifier (PA) with Class-B push-pull configuration in 0.25-μm SiGe-C Heterojunction Bipolar Transistor (HBT) BiCMOS process. The PA consists of input balun, driver stage, ...