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Toplam kayıt 6, listelenen: 1-6
Inter-HAP based geometrical 3-D channel model operating at 28 to 60 GHz for future 6G non-terrestrial networks
(Institute of Electrical and Electronics Engineers Inc., 2023)
This paper presents a geometrical 3-D channel model for stationary inter-high altitude platform (HAP) systems operating at millimeter wave (mmWave) frequency bands for the future 6G non-terrestrial networks (NTNs). The ...
A wideband high-efficiency doherty power amplifier for LTE
(Institute of Electrical and Electronics Engineers Inc., 2023)
This article describes a broadband Doherty power amplifier designed with a class AB and class C PA that is suitable for LTE Band-7 and Wi-Fi applications. The output matching network is theoretically analyzed, with emphasis ...
Estimating multi-dimensional sparsity level for spectrum sensing
(Institute of Electrical and Electronics Engineers Inc., 2023)
Identifying spectrum opportunities is a crucial element of efficient spectrum utilization for future wireless networks. Spectrum sensing offers a convenient means for revealing such opportunities. Studies showed that usage ...
Signal of opportunity based TDOA positioning using analog TV signals
(IEEE Computer Society, 2023)
The ability to self-localize is an essential requirement for many systems. Mostly, this is accomplished by using a Global Positioning System (GPS) receiver. However, in some situations, the GPS receiver is disabled by ...
Dual band (28/38 GHz) antenna design for 5G mmWave communication networks
(Institute of Electrical and Electronics Engineers Inc., 2023)
The goal of the 5G millimeter-wave (mmWave) technology is to outperform the earlier wireless technology generations in terms of data throughput, latency, and connection reliability. It has the potential to revolutionize ...
An X-band class-B push-pull power amplifier on a 0.25 μm SiGe-C process
(Institute of Electrical and Electronics Engineers Inc., 2023)
This paper presents design of an X-band power amplifier (PA) with Class-B push-pull configuration in 0.25-μm SiGe-C Heterojunction Bipolar Transistor (HBT) BiCMOS process. The PA consists of input balun, driver stage, ...