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dc.contributor.authorKoca, Kaan
dc.contributor.authorSavcı, Hüseyin Şerif
dc.contributor.authorKent, Sedef
dc.date.accessioned2023-06-16T10:47:44Z
dc.date.available2023-06-16T10:47:44Z
dc.date.issued2023en_US
dc.identifier.citationKoca, K., Savcı, H. Ş. ve Kent, S. (2023). A wideband high-efficiency doherty power amplifier for LTE. 33rd International Conference on Radioelektronika (RADIOELEKTRONIKA). Pardubice, Czech Republic, April 19-20, 2023. https://doi.org/10.1109/RADIOELEKTRONIKA57919.2023.10109057en_US
dc.identifier.isbn9798350398342
dc.identifier.urihttps://doi.org/10.1109/RADIOELEKTRONIKA57919.2023.10109057
dc.identifier.urihttps://hdl.handle.net/20.500.12511/11099
dc.description.abstractThis article describes a broadband Doherty power amplifier designed with a class AB and class C PA that is suitable for LTE Band-7 and Wi-Fi applications. The output matching network is theoretically analyzed, with emphasis on the effect of the auxiliary amplifier's non-ideal infinite output impedance on parasitic devices. A novel Doherty-like power amplifier (DPA) is constructed with 25 W, 2.2-2.8 GHz GaN HEMT transistors. The quarter-wave transformer that was previously used in the DPA topology was replaced by the corresponding Klopfenstein tapper network. Real-world prototype implementations have shown that this modification increases the achieved DPA bandwidth (BW) compared to conventional topologies while maintaining efficiency values. (Fractional bandwidth equals 24%) The DPA assumes an OBO value of 6 dB, which is typical for basic designs and explanations because the voltage level involved is 1:4 and the peak power amplifier is activated at half of the input voltage's dynamic range. However, in order to increase the OBO value, the signal must first be compatible with the PAPR value. This can be accomplished by adjusting the power divider in an asymmetrical manner. The OPBO range was extended using the asymmetric DPA technique.en_US
dc.language.isoengen_US
dc.publisherInstitute of Electrical and Electronics Engineers Inc.en_US
dc.rightsinfo:eu-repo/semantics/embargoedAccessen_US
dc.subjectDoherty Power Amplifiers (DPA)en_US
dc.subjectBroadband Matching Networksen_US
dc.subjectGaN-Based Field-Effect Transistors (FETs)en_US
dc.subjectWideband Microwave Amplifiersen_US
dc.subjectLong-Term Evolution (LTE)en_US
dc.subjectWi-Fien_US
dc.titleA wideband high-efficiency doherty power amplifier for LTEen_US
dc.typeconferenceObjecten_US
dc.relation.ispartof33rd International Conference on Radioelektronika (RADIOELEKTRONIKA)en_US
dc.departmentİstanbul Medipol Üniversitesi, Mühendislik ve Doğa Bilimleri Fakültesi, Elektrik ve Elektronik Mühendisliği Bölümüen_US
dc.authorid0000-0002-5881-1557en_US
dc.relation.publicationcategoryKonferans Öğesi - Uluslararası - Kurum Öğretim Elemanıen_US
dc.identifier.doi10.1109/RADIOELEKTRONIKA57919.2023.10109057en_US
dc.institutionauthorSavcı, Hüseyin Şerif
dc.identifier.wos000990505700031en_US


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