Numerical and measurement based modeling of a MiM capacitor in a 0.25 µm SiGe-C BiCMOS process
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CitationAniktar, H. ve Savcı, H. Ş. (2023). Numerical and measurement based modeling of a MiM capacitor in a 0.25 µm SiGe-C BiCMOS process. Progress In Electromagnetics Research C, 129, 173-186. https://dx.doi.org/10.2528/PIERC22112103
This study presents the generation of a scalable model based on measurement-aided numerical calculations for MiMCap (Metal-Insulator-Metal Capacitor) structures with a 0.25 µm SiGe-C BiCMOS technology. Various MiM capacitor structures with several different areas and peripheral sizes are fabricated in an in-house developed BiCMOS process. A set of fix-size models and a generic, scalable model are developed based on numerical EM calculations. The validity of the constructed model is verified with the measurement results. The model includes the breakdown voltage ratings, which are also extracted through the measurements. The model, EM simulations, and measurement results are in good agreement.